+5V

50:

50:

170:

1k:

100:

6

5

4

3

12

10

9

11

LMH6503

1

14

8 7

2

-5V

13

NC

-1.2

-0.8

-0.4

0

0.4

0.8

-80

-70

-60

-50

-40

-30

30

1.2

-20

-10

0

10

20

0

1

2

3

4

5

11

6

7

8

9

10

dB

V/V

-40°C

25°C

85°C

-40°C

25°C

85°C

LMH6503

SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013

www.ti.com

Typical Application

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

2

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