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DS26C31TM 데이터시트(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 DS26C31TM
상세설명  CMOS Quad TRI-STATE Differential Line Driver
PDF  12 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS26C31TM 데이터시트(HTML) 2 Page - National Semiconductor (TI)

  DS26C31TM Datasheet HTML 1Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 2Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 3Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 4Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 5Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 6Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 7Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 8Page - National Semiconductor (TI) DS26C31TM Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.5V to 7.0V
DC Input Voltage (V
IN)
−1.5V to V
CC +1.5V
DC Output Voltage (V
OUT)
−0.5V to 7V
Clamp Diode Current (I
IK,IOK)
±20 mA
DC Output Current, per pin (I
OUT)
±150 mA
DC V
CC or GND Current,
per pin (I
CC)
±150 mA
Storage Temperature Range (T
STG)
−65˚C to +150˚C
Max. Power Dissipation (P
D) @25˚C (Note 3)
Ceramic “J” Pkg.
2419 mW
Plastic “N” Pkg.
1736 mW
SOIC “M” Pkg.
1226 mW
Ceramic “W” Pkg.
1182 mW
Ceramic “E” Pkg.
2134 mW
Lead Temperature (T
L)
(Soldering, 4 sec.)
260˚C
This device does not meet 2000V ESD Rating. (Note 13)
Operating Conditions
Min
Max
Units
Supply Voltage (V
CC)
4.50
5.50
V
DC Input or Output Voltage
(V
IN,VOUT)0
V
CC
V
Operating Temperature Range (T
A)
DS26C31T
−40
+85
˚C
DS26C31M
−55
+125
˚C
Input Rise or Fall Times (t
r,tf)
500
ns
DC Electrical Characteristics
V
CC = 5V ± 10% (unless otherwise specified) (Note 4)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
High Level Input Voltage
2.0
V
V
IL
Low Level Input Voltage
0.8
V
V
OH
High Level Output Voltage
V
IN = VIH or VIL,
2.5
3.4
V
I
OUT = −20 mA
V
OL
Low Level Output
V
IN = VIH or VIL,
0.3
0.5
V
Voltage
I
OUT = 20 mA
V
T
Differential Output
R
L = 100Ω
2.0
3.1
V
Voltage
(Note 5)
|V
T|−|VT |
Difference In
R
L = 100Ω
0.4
V
Differential Output
(Note 5)
V
OS
Common Mode
R
L = 100Ω
1.8
3.0
V
Output Voltage
(Note 5)
|V
OS −VOS |
Difference In
R
L = 100Ω
0.4
V
Common Mode Output
(Note 5)
I
IN
Input Current
V
IN = VCC, GND, VIH,orVIL
±1.0
µA
I
CC
Quiescent Supply
DS26C31T
V
IN = VCC or GND
200
500
µA
Current (Note 6)
I
OUT = 0µA
V
IN = 2.4V or 0.5V
0.8
2.0
mA
(Note 6)
DS26C31M
V
IN = VCC or GND
200
500
µA
I
OUT = 0µA
V
IN = 2.4V or 0.5V
0.8
2.1
mA
(Note 6)
I
OZ
TRI-STATE Output
V
OUT = VCC or GND
Leakage Current
ENABLE = V
IL
±0.5
±5.0
µA
ENABLE = V
IH
I
SC
Output Short
V
IN = VCC or GND
−30
−150
mA
Circuit Current
(Notes 5, 7)
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