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ZXMP6A16DN8Q 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMP6A16DN8Q
상세설명  DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A16DN8Q 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1.0
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 13)
RDS (ON)
85
mΩ
VGS = -10V, ID = -2.9A
125
VGS = -4.5V, ID = -2.4A
Forward Transconductance (Notes 13 & 14)
gfs
7.2
S
VDS = -15V, ID = -2.9A
Diode Forward Voltage (Note 13)
VSD
-0.85
-0.95
V
IS = -3.4A, VGS = 0V, TJ = +25°C
Reverse recovery time (Note 14)
trr

29.2
ns
IS = -2A, di/dt = 100A/µs,
TJ = +25°C
Reverse recovery charge (Note 14)
Qrr
39.6
nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
Ciss
1021
pF
VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
83.1
pF
Reverse Transfer Capacitance
Crss
56.4
pF
Total Gate Charge (Note 15)
Qg

12.1

nC
VGS = -5V
VDS = -30V,
ID = -2.9A
Total Gate Charge (Note 15)
Qg
24.2
nC
VGS = -10V
Gate-Source Charge (Note 15)
Qgs
2.5
nC
Gate-Drain Charge (Note 15)
Qgd
3.7
nC
Turn-On Delay Time (Note 15)
tD(on)
3.5
ns
VDD = -30V, VGS = -10V,
ID = -1A, RG  6Ω
Turn-On Rise Time (Note 15)
tr
4.1
ns
Turn-Off Delay Time (Note 15)
tD(off)
35
ns
Turn-Off Fall Time (Note 15)
tf
10
ns
Notes:
13. Measured under pulsed conditions. Pulse width
 300µs; duty cycle  2%
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperatures.



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