| 전자부품 데이터시트 검색엔진 |
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BUV18 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV18 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUV18 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 80A; IB= 8A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 80A; IB= 8A 2.2 V ICEX Collector Cutoff Current VCE= 120V;VBE= -1.5V VCE= 120V;VBE= -1.5V;TC=100℃ 1.0 3.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 2A; VCE= 15V 8 MHz Switching Times ton Turn-on Time IC= 80A; IB1= -IB2= 8A; VCC= 60V 1.5 μs ts Storage Time 1.1 μs tf Fall Time 0.25 μs |
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