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LP3988IMF-3.3/NOPB 데이터시트(PDF) 5 Page - Texas Instruments

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부품명 LP3988IMF-3.3/NOPB
상세설명  Micropower, 150-mA Ultra-Low-Dropout CMOS Voltage Regulator
PDF  25 Pages
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홈페이지  http://www.ti.com
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LP3988IMF-3.3/NOPB 데이터시트(HTML) 5 Page - Texas Instruments

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SNVS161E – OCTOBER 2001 – REVISED OCTOBER 2015
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
NOM
MAX
UNIT
VIN
2.5(3)
6
V
VOUT, VEN
0
VIN
V
VPG
0
6
V
IPG
0
500
µA
Junction temperature, TJ
–40
125
°C
SOT-23
322
Maximum power dissipation(4)
mW
DSBGA
303
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
The minimum VIN is dependant on the device output option. For VOUT(NOM) < 2.5 V, VIN(MIN) equals 2.5 V. For VOUT(NOM) ≥ 2.5 V, VIN(MIN)
equals VOUT(NOM) + 200 mV.
(4)
Like the Absolute Maximum power dissipation, the maximum power dissipation for operation depends on the ambient temperature. The
322-mW rating appearing under Recommended Operating Conditions for the SOT-23-5 package results from substituting the maximum
junction temperature for operation, 125°C, for TJ(MAX), 70°C for TA(MAX), and 181.2°C/W for RθJA. More power can be dissipated at
ambient temperatures below 70°C . Less power can be dissipated at ambient temperatures above 70°C. The maximum power
dissipation for operation can be increased by 4.5 mW for each degree below 70°C, and it must be derated by 5.86 mW for each degree
above 70°C. The same principle applies to the DSBGA package.
6.4 Thermal Information
LP3988
THERMAL METRIC(1)
DBV (SOT-23)
YZR (DSBGA)
UNIT
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
170.5
181.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124.4
0.8
°C/W
RθJB
Junction-to-board thermal resistance
30.9
107.9
°C/W
ψJT
Junction-to-top characterization parameter
17.6
0.5
°C/W
ψJB
Junction-to-board characterization parameter
30.4
107.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Copyright © 2001–2015, Texas Instruments Incorporated
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