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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAV99 데이터시트(PDF) 2 Page - Diode Semiconductor Korea |
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BAV99 데이터시트(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page  Dual series switching diode BAV99 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 2.5μA 75 V Reverse voltage leakage current IR VR=25V VR=75V VR=25V Tj=150℃ VR=75V Tj=150℃ 35 1 30 50 nA μA μA μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V f=1MHz 1.5 pF Reverse recovery time trr IF=IR=10mA, Irr=0.1×IR,RL=100Ω 4 nS TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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