LL4150 datasheet(1/2 Pages) DSK

부품명	LL4150

상세설명	SMALL SIGNAL SWITCHING DIODE

PDF	2 Pages

Scroll/Zoom	100%

제조업체	DSK [Diode Semiconductor Korea]

홈페이지	http://www.diode.kr/

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1 / 2 page

3.4

+0.3

-0.1

0.4± 0.1

Cathode indification

FEATURES

◇ Silicon epitaxial planar diode

◇ High speed switching diode

◇ 500 mW power dissipation

MECHANICAL DATA

◇ Case:

MINI-MELF,glass case

◇ Polarity: Color band denotes cathode

◇ Weight:

Approx 0.031 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

VR

V

Peak reverse voltage

VRM

V

Average forward rectified current VR=0V

IO

mA

Forward surge current at t=1

µs

IFSM

A

Power dissipation

Ptot

mW

Thermal resistance junction to ambient

Rthja

K/W

Junction temperature

Tj

℃

Storage temperature range

TSTG

℃

UNITS

Forward voltage at IF=1mA

IF=10mA

IF=50mA

IF=100mA

IF=200mA

Leakage current @VR=50V,TJ=25℃

VR=50V,TJ=150℃

Capacitance at VR=0V,f=1MHZ,VHF=50mV

Ctot

pF

Reverse recovery time

IF=IR=(10to100mA),iR=0.1×IR

RL=100Ω

-

4.0

trr

-

-65 --- + 175

4.0

500

MAX.

LL4150

300

VOLTAGE RANGE: 50 V

SMALL SIGNAL SWITCHING DIODE

50

CURRENT: 300 m A

LL4150

MINI-MELF

ELECTRICAL CHARACTERISTICS

175

350

MIN.

0.76

0.82

0.87

0.66

0.54

0.86

0.92

1.0

0.1

2.5

ns

-

100

V

VF

IR

µA

-

0.74

0.62

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr

유사한 부품 번호 - LL4150

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Vishay Siliconix	LL4150	94Kb / 5P	Silicon Epitaxial Planar Diodes 06-Apr-04
Diodes Incorporated	LL4150	50Kb / 1P	SURFACE MOUNT FAST SWITCHING DIODE DS30069 Rev. C-2
Formosa MS	LL4150	63Kb / 2P	High-speed switching diode
General Semiconductor	LL4150	29Kb / 1P	Small Signal Diodes
Microsemi Corporation	LL4150	66Kb / 1P	MINI-MELF-SMD Silicon Diode

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LL4150 데이터시트(PDF) 1 Page - Diode Semiconductor Korea

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