+

~

~-

20± 0.55

2.3± 0.2

5.0± 0.3

1.2± 0.1

3.5± 0.35

1.1± 0.25

0.6± 0.15

FEATURES

Rating to 1000V PRV

Surge overload rating to 5

0Am peres peak

Ideal for printed circuit board

Reliable low cos t cons truction utilizing m olded

plas tic technique res ults in inexpens ive product

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unles s otherwis e s pecified.

Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.

K

BJ

2D

K

BJ

2G

K

BJ

2J

KBJ

2K

K

BJ

2M

UNITS

Maximum recurrent peak reverse voltage

200

400

600

800

1000

V

Maximum RMS voltage

140

280

420

560

700

V

Maximum DC blocking voltage

200

400

600

800

1000

V

Maximum average forw ard

Output current

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at 1.0 A

V

Maximum reverse current

@T

μA

at rated DC blocking voltage

@T

mA

Typical junction capacitance per element

pF

Typical thermal resistance

/W

Operating junction temperature range

Storage temperature range

K

BJ

2A

K

BJ

2B

50

100

1.0

2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.

1.0

A

2.0

A

KBJ2A- - - KBJ2M

SILICON BRIDGE RECT IFIERS

50.0

KBJ2

100

70

VOLT AGE RANGE: 50 --- 1000 V

CURRENT :

2.0 A

35

50

Lead s olderable per MIL-STD-202 m ethod 208

Polarity:Sym bols m olded on body

Mounting pos ition: Any

MECHANCAL DATA

Weight:0.092 ounces , 2.334 gram s

NOTES:1.Measured at 1.0MH

- 55 ---- + 150

- 55 ---- + 1

25

45

2.2

10.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr