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THS4271D 데이터시트(PDF) 2 Page - Texas Instruments

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부품명 THS4271D
상세설명  LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FREEBACK AMPLIFIER
PDF  38 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

THS4271D 데이터시트(HTML) 2 Page - Texas Instruments

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THS4271
THS4275
SLOS397E − JULY 2002 − REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
100 mA
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, TJ
150
°C
Maximum junction temperature, continuous
operation, long term reliability TJ (2)
125
°C
Storage temperature range, Tstg
−65
°C to 150°C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300
°C
HBM
3000 V
ESD ratings:
CDM
1500 V
ESD ratings:
MM
1000 V
(1) The absolute maximum temperature under any condition is
limited by the constraints of the silicon process. Stresses above
these ratings may cause permanent damage. Exposure to
absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
θJC
θJA(1)
POWER RATING(2)
PACKAGE
θJC
(
°C/W)
θJA(1)
(
°C/W)
TA ≤ 25°C
TA = 85°C
D (8 pin)
38.3
97.5
1.02 W
410 mW
DGN (8 pin)(3)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
54.2
260
385 mW
154 mW
DRB (8 pin)(3)
5
45.8
2.18 W
873 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
°C for best performance and
long term reliability.
(3) The THS4271/5 may incorporate a PowerPAD
 on the underside
of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical briefs SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage, (VS+ and VS−)
Dual supply
±2.5
±7.5
V
Supply voltage, (VS+ and VS−)
Single supply
5
15
V
Input common-mode voltage range
VS− + 1.4
VS+ − 1.4
V
PACKAGING/ORDERING INFORMATION
ORDERABLE PACKAGE AND NUMBER
PLASTIC
SMALL OUTLINE
LEADLESS MSOP 8 (2)
PLASTIC MSOP (1)
PowerPAD
PLASTIC MSOP (1)
SMALL OUTLINE
(D) (1)
(DRB)
(DGN)
PACKAGE
MARKING
(DGK)
PACKAGE
MARKING
THS4271D
THS4271DRBT
THS4271DGN
BFQ
THS4271DGK
BEY
THS4271DR
THS4271DRBR
THS4271DGNR
BFQ
THS4271DGKR
BEY
THS4275D
THS4275DRBT
THS4275DGN
BFR
THS4275DGK
BJD
THS4275DR
THS4275DRBR
THS4275DGNR
BFR
THS4275DGKR
BJD
(1) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4271DGNR).
(2) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4271DRBT).



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