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THS4271D 데이터시트(PDF) 2 Page - Texas Instruments |
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THS4271D 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 38 page ![]() THS4271 THS4275 SLOS397E − JULY 2002 − REVISED JANUARY 2004 www.ti.com 2 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) UNIT Supply voltage, VS 16.5 V Input voltage, VI ±VS Output current, IO 100 mA Continuous power dissipation See Dissipation Rating Table Maximum junction temperature, TJ 150 °C Maximum junction temperature, continuous operation, long term reliability TJ (2) 125 °C Storage temperature range, Tstg −65 °C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 °C HBM 3000 V ESD ratings: CDM 1500 V ESD ratings: MM 1000 V (1) The absolute maximum temperature under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE DISSIPATION RATINGS PACKAGE θJC θJA(1) POWER RATING(2) PACKAGE θJC ( °C/W) θJA(1) ( °C/W) TA ≤ 25°C TA = 85°C D (8 pin) 38.3 97.5 1.02 W 410 mW DGN (8 pin)(3) 4.7 58.4 1.71 W 685 mW DGK (8 pin) 54.2 260 385 mW 154 mW DRB (8 pin)(3) 5 45.8 2.18 W 873 mW (1) This data was taken using the JEDEC standard High-K test PCB. (2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or below 125 °C for best performance and long term reliability. (3) The THS4271/5 may incorporate a PowerPAD on the underside of the chip. This acts as a heat sink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the PowerPAD thermally enhanced package. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT Supply voltage, (VS+ and VS−) Dual supply ±2.5 ±7.5 V Supply voltage, (VS+ and VS−) Single supply 5 15 V Input common-mode voltage range VS− + 1.4 VS+ − 1.4 V PACKAGING/ORDERING INFORMATION ORDERABLE PACKAGE AND NUMBER PLASTIC SMALL OUTLINE LEADLESS MSOP 8 (2) PLASTIC MSOP (1) PowerPAD PLASTIC MSOP (1) SMALL OUTLINE (D) (1) (DRB) (DGN) PACKAGE MARKING (DGK) PACKAGE MARKING THS4271D THS4271DRBT THS4271DGN BFQ THS4271DGK BEY THS4271DR THS4271DRBR THS4271DGNR BFQ THS4271DGKR BEY THS4275D THS4275DRBT THS4275DGN BFR THS4275DGK BJD THS4275DR THS4275DRBR THS4275DGNR BFR THS4275DGKR BJD (1) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4271DGNR). (2) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4271DRBT). |
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