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1SS355 데이터시트(PDF) 2 Page - Bruckewell Technology LTD |
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1SS355 데이터시트(HTML) 2 Page - Bruckewell Technology LTD |
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2 / 5 page ![]() 1SS355 SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE Publication Order Number: [1SS355] © Bruckewell Technology Corporation Rev. A -2014 Electrical characteristics (Tc=25°C unless otherwise noted) Parameter Test Condition Symbol Min. Typ. Max. Unit Forward Voltage IF = 100 mA VF -- -- 1.2 V Reverse Current VR = 80 V IR -- -- 0.1 μA Capacitance between terminals f = 1MHz ; VR = 0.5 CT -- -- 3.0 pF Reverse Recovery Time IF = 10 mA , VR = 6 V RL = 100 Ω Trr -- -- 4.0 ns |
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