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SST4119 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SST4119
상세설명  N-Channel JFETs
PDF  5 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
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2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
−40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
−65 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
−55 to 150_C
. . . . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix)
−55 to 175_C
. . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)
−55 to 150_C
. . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300_C
. . . . . . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)a
300 mW
. . . . . . . . . . . . . . . . . . . . . .
(PN, SST Prefix)b
350 mW
. . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/_C above 25_C
b.
Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = −1 mA , VDS = 0 V
−70
−40
−
40
−40
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 nA
−0.6
−1.8
−1
−3
−2
−6
V
Saturation Drain Current
IDSS
VDS = 10 V, VGS = 0 V
30
90
80
240
200
600
mA
VGS = −20 V
VDS = 0 V
−0.2
−1
−1
−1
pA
Gt R
C
t
I
VGS = −20 V
VDS = 0 V
TA = 150_C
2N
−0.4
−2.5
−2.5
−2.5
nA
Gate Reverse Current
IGSS
VGS = −10 V
PN
−0.2
−1
−1
−1
pA
VGS = −10 V
VDS = 0 V
SST
−0.2
−10
−10
−10
pA
VGS = −10 V
VDS = 0 V
TA = 100_C
PN/SST
−0.03
−2.5
−2.5
−2.5
nA
Gate Operating Currentb
IG
VDG = 15 V, ID = 30 mA
−0.2
pA
Drain Cutoff Currentb
ID(off)
VDS = 10 V, VGS = −8 V
0.2
pA
Gate-Source Forward Voltageb
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = 10 V, VGS = 0 V
70
210
80
250
100
330
mS
Common-Source
Output Conductance
gos
VDS = 10 V, VGS = 0 V
f = 1 kHz
3
5
10
mS
Common-Source
Ci
2N/PN
1.2
3
3
3
Common-Source
Input Capacitance
Ciss
VDS = 10 V
VGS = 0 V
SST
1.2
pF
Common-Source
C
VGS = 0 V
f = 1 MHz
2N/PN
0.3
1.5
1.5
1.5
pF
Common-Source
Reverse Transfer Capacitance
Crss
f = 1 MHz
SST
0.3
Equivalent Input Noise Voltageb
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
15
nV⁄
√Hz
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NT
b.
This parameter not registered with JEDEC.



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