CSD23285F5 datasheet(1/14 Pages) TI1

부품명	CSD23285F5

상세설명	12-V, P-Channel FemtoFET MOSFET

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D

G

S

0.77 mm

0.35 mm

1.53 mm

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD23285F5

SLPS608 – AUGUST 2016

CSD23285F5 –12-V, P-Channel FemtoFET™ MOSFET

1

1 Features

1

•

Low On-Resistance

•

Low Qg and Qgd

•

Ultra-Small Footprint

–

1.53 mm × 0.77 mm

–

0.50-mm Pad Pitch

•

Low Profile

–

0.35-mm Height

•

Integrated ESD Protection Diode

–

Rated > 4 kV HBM

–

Rated > 2 kV CDM

•

Lead and Halogen Free

•

RoHS Compliant

2 Applications

•

Optimized for Industrial Load Switch Applications

•

Optimized for General Purpose Switching

Applications

3 Description

This

29-mΩ,

–12-V,

P-Channel

FemtoFET™

MOSFET technology is designed and optimized to

minimize the footprint in many handheld and mobile

applications. This technology is capable of replacing

standard small signal MOSFETs while providing a

significant reduction in footprint size.

.

Typical Part Dimensions

.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

–12

V

Qg

Gate Charge Total (–4.5 V)

3.2

nC

Qgd

Gate Charge Gate-to-Drain

0.48

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = –1.5 V

64

m

Ω

VGS = –1.8 V

49

VGS = –2.5 V

38

VGS = –4.5 V

29

VGS(th)

Threshold Voltage

–0.65

V

.

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD23285F5

3000

7-Inch

Reel

Femto

1.53-mm × 0.77-mm

SMD Leadless

Tape and

Reel

CSD23285F5T

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

–12

V

VGS

Gate-to-Source Voltage

–6

V

ID

Continuous Drain Current(1)

–3.3

A

Continuous Drain Current(2)

–5.4

IDM

Pulsed Drain Current(1)(3)

–31

A

PD

Power Dissipation(1)

0.5

W

Power Dissipation(2)

1.4

ESD

Rating

Human Body Model (HBM)

4000

V

Charged Device Model (CDM)

2000

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 150

°C

(1) Min Cu, typical RθJA = 245°C/W.

(2) Max Cu, typical RθJA = 90°C/W.

(3) Pulse duration

≤ 100 μs, duty cycle ≤ 1%.

Top View

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