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MCP1406T-E/AT 데이터시트(PDF) 4 Page - Microchip Technology |
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MCP1406T-E/AT 데이터시트(HTML) 4 Page - Microchip Technology |
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4 / 30 page ![]() MCP1406/07 DS20002019C-page 4 2006-2016 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage ................................................................+20V Input Voltage ..................................(VDD +0.3V) to (GND -5V) Input Current (VIN > VDD) ..............................................50 mA Package Power Dissipation (TA <= +70°C) DFN-S .......................................................................2.5W PDIP..........................................................................1.2W SOIC .......................................................................0.83W TO-220 ......................................................................3.9W ESD Protection on all Pins ................2 kV (HBM), 400V (MM) † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5VVDD18V. Parameters Sym. Min. Typ. Max. Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1.3 0.8 V Input Current IIN –10 — 10 µA 0V VINVDD Input Voltage VIN -5 — VDD +0.3 V Output High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH —2.1 2.8 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL —1.5 2.5 IOUT = 10 mA, VDD = 18V Peak Output Current IPK —6 — A VDD 18V (Note 1) Continuous Output Current IDC 1.3 A Note 1, Note 2 Latch-Up Protection Withstand Reverse Current IREV — 1.5 — A Duty cycle 2%, t 300 µs Switching Time (Note 3) Rise Time tR —20 30 ns Figure 4-1, Figure 4-2 CL = 2500 pF Fall Time tF —20 30 ns Figure 4-1, Figure 4-2 CL = 2500 pF Delay Time tD1 —40 55 ns Figure 4-1, Figure 4-2 Delay Time tD2 —40 55 ns Figure 4-1, Figure 4-2 Power Supply Supply Voltage VDD 4.5 — 18.0 V Power Supply Current IS — 130 250 µA VIN = 3V IS — 35 100 µA VIN = 0V Note 1: Tested during characterization, not production tested. 2: Valid for AT (TO-220) and MF (DFN-S) packages only. TA = +25°C 3: Switching times ensured by design. |
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