MSD39N08

30V N-Channel MOSFETs

Publication Order Number: [MSD39N08]

Description

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features

• 30V, 55A, RDS(ON) =9

mΩ@VGS = 10V

• Improved dv/dt capability

• Fast switching

• 100% EAS Guaranteed

• RoHS compliant package

Applications

• MB / VGA / Vcore

• POL Applications

• SMPS 2nd SR

Packing & Order Information

Shipping：80/Tube ; 2,500/Box

TO-252 Package

Graphic symbol