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IRF6607 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF6607
상세설명  Power MOSFET
PDF  11 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6607 데이터시트(HTML) 2 Page - International Rectifier

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IRF6607
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
29
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.5
3.3
m
Ω
–––
3.4
4.4
VGS(th)
Gate Threshold Voltage
1.3
–––
2.0
V
∆V
GS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.3
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
30
µA
–––
–––
50
µA
–––
–––
100
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
120
–––
–––
S
Qg
Total Gate Charge
–––
50
75
Qgs1
Pre-Vth Gate-to-Source Charge
–––
13
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.0
–––
nC
Qgd
Gate-to-Drain Charge
–––
16
–––
Qgodr
Gate Charge Overdrive
–––
18
–––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
20
–––
Qoss
Output Charge
–––
30
–––
nC
RG
Gate Resistance
–––
0.6
1.9
Ω
td(on)
Turn-On Delay Time
–––
60
–––
tr
Rise Time
–––
8.0
–––
td(off)
Turn-Off Delay Time
–––
32
–––
ns
tf
Fall Time
–––
13
–––
Ciss
Input Capacitance
–––
6930
–––
Coss
Output Capacitance
–––
1260
–––
pF
Crss
Reverse Transfer Capacitance
–––
510
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
™
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
27
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
220
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
1.0
1.3
V
trr
Reverse Recovery Time
–––
46
69
ns
Qrr
Reverse Recovery Charge
–––
54
81
nC
–––
VGS = 4.5V
Typ.
–––
–––
ID = 20A
VGS = 0V
VDS = 15V
ID = 20A
51
TJ = 25°C, IF = 20A
di/dt = 100A/µs
e
TJ = 25°C, IS = 20A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
20
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
e
Max.
VGS = 4.5V, ID = 20A
e
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
MOSFET symbol
Clamped Inductive Load
VDS = 15V, ID = 20A
Conditions
0.36
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
Ãe
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 70°C
VDS = 15V
VGS = 12V
VGS = -12V



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