MS69P05 datasheet(3/6 Pages) BWTECH

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MS69P05

60V P-Channel MOSFETs

Publication Order Number: [MS69P05]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VGS = 0 V,

VDS = 25 V,

f = 1MHz

1250

1810

COSS

Output Capacitance

125

CRSS

Reverse Transfer Capacitance

Gate resistance

VGS = 0 V, VDS = 0 V, F=1MHz

Drain-Source Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source Current

VD=VG=0V

Force Current

-20

ISM

Pulsed Source Current

-80

VSD

Diode Forward Voltage

IS = -1 A , VGS = 0 V , TJ=25°C

-1

trr

Reverse Recovery Time

VGS = 0, Is = -1 A,

dI/dt=100A/us , TJ=25°C

Qrr

Reverse Recovery Charge

Note :

1.Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.VDD=-25V,VGS=-10V,L=0.1mH,IAS=-32A.,RG=25

Ω,Starting TJ=25℃

3.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

4.Essentially independent of operating temperature.

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