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LP2997 데이터시트(PDF) 9 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
부품명 LP2997
상세설명  DDR-II Termination Regulator
PDF  12 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP2997 데이터시트(HTML) 9 Page - National Semiconductor (TI)

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Thermal Dissipation (Continued)
top side of the board can also help. With careful layout it is
possible to reduce the
θ
JA further than the nominal values
shown in Figure 1
Optimizing the
θ
JA and placing the LP2997 in a section of a
board exposed to lower ambient temperature allows the part
to operate with higher power dissipation. The internal power
dissipation can be calculated by summing the three main
sources of loss: output current at V
TT, either sinking or
sourcing, and quiescent current at AVIN and VDDQ. During
the active state (when shutdown is not held low) the total
internal power dissipation can be calculated from the follow-
ing equations:
P
D =PAVIN +PVDDQ +PVTT
Where,
P
AVIN =IAVIN *VAVIN
P
VDDQ =VVDDQ *IVDDQ =VVDDQ2 xRVDDQ
To calculate the maximum power dissipation at V
TT both
conditions at V
TT need to be examined, sinking and sourcing
current. Although only one equation will add into the total,
V
TT cannot source and sink current simultaneously.
P
VTT =VVTT xILOAD (Sinking) or
P
VTT =(VPVIN -VVTT)xILOAD (Sourcing)
The power dissipation of the LP2997 can also be calculated
during the shutdown state. During this condition the output
V
TT will tri-state, therefore that term in the power equation
will disappear as it cannot sink or source any current (leak-
age is negligible). The only losses during shutdown will be
the reduced quiescent current at AVIN and the constant
impedance that is seen at the VDDQ pin.
P
D =PAVIN +PVDDQ
P
AVIN =IAVIN xVAVIN
P
VDDQ =VVDDQ *IVDDQ =VVDDQ2 xRVDDQ
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