ISO7821 datasheet(8/39 Pages) TI1

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ISO7821, ISO7821F

SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016

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(1)

For more information about trdational and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

ISO7821

UNIT

DW (SOIC)

DWW (SOIC)

16 PINS

16-PINS

RθJA

Junction-to-ambient thermal resistance

84.7

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

47.3

46.0

°C/W

RθJB

Junction-to-board thermal resistance

49.4

54.5

°C/W

ψJT

Junction-to-top characterization parameter

19.1

18.5

°C/W

ψJB

Junction-to-board characterization parameter

48.8

53.8

°C/W

RθJC(bottom)

Junction-to-case(bottom) thermal resistance

n/a

°C/W

6.5 Power Dissipation Characteristics

VALUE

UNIT

Maximum power dissipation by ISO7821x

VCC1 = VCC2 = 5.5 V, TJ = 150°C,

CL = 15 pF, input a 50 MHz 50% duty cycle

square wave

100

PD1

Maximum power dissipation by side-1 of

ISO7821x

PD2

Maximum power dissipation by side-2 of

ISO7821x

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