| 전자부품 데이터시트 검색엔진 |
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IPS021L 데이터시트(PDF) 1 Page - International Rectifier |
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IPS021L 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 11 page ![]() Features • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection IPS021L FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No.PD60145-K Description The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, over- temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh envi- ronments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 oC or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. Package Product Summary Rds(on) 150m Ω (max) V clamp 50V Ishutdown 5A Ton/Toff 1.5 µs Typical Connection 3 Lead SOT223 www.irf.com 1 S Q Load D S control IN R in series (if needed) Logic signal (Refer to lead assignment for correct pin configuration) |
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