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2SA1261-Z 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SA1261-Z
상세설명  isc Silicon PNP Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SA1261-Z
DESCRIPTION
·
High switching speed
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC= -5A
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
Complementary to 2SC3157
APPLICATIONS
·
High speed high voltage switching industrial use
·
DC/DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-3.5
A
PC
Total Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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