2SC2873 datasheet(1/2 Pages) HOTTECH

부품명	2SC2873

상세설명	Plastic-Encapsulate Transistors

PDF	2 Pages

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제조업체	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

홈페이지	http://www.hottech.net.cn/

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Small flat package.

• Low saturation voltage VCE(sat)=-0.5V

• High speed switching time

• PC=1.0 to 2.0W

• Complementary to 2SA1213

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

2

A

Collector Power dissipation

PC

0.5

1

(1)

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

Note (1):Mounted on a ceramic substrate(250mm2*0.8t)

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

VCEO

IC=10mA, IB=0

50

V

Collector cut-off current

ICBO

VCB=50V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=500mA

70

240

Collector-emitter saturation voltage

VCE(sat)

IC=1A, IB=50mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=1A, IB=50mA

1.2

mV

Transition frequency

fT

VCE=2V,Ic=0.5A

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

70-140

120-240

Marking

MO

MY

2SC2873 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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2SC2873 데이터시트(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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