2SD965 datasheet(1/2 Pages) HOTTECH

부품명	2SD965

상세설명	Plastic-Encapsulate Transistors

PDF	2 Pages

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제조업체	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

홈페이지	http://www.hottech.net.cn/

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• Collector current up to 5A

• Collector-Emitter voltage up to 20V

Marking: D965

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

7

V

Collector Current -Continuous

IC

3

A

Collector Power dissipation

PC

0.75

W

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100μA, IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=1mA ,IB=0

20

V

Emitter-base breakdown voltage

VEBO

IE=10μA, IC=0

7

V

Collector cut-off current

ICBO

VCB=10V, IE=0

0.1

uA

Emitter cut-off current

IEBO

VEB=7V,IC=0

0.1

uA

Collector-emitter saturation voltage

VCE(sat)

IC/IB=3A/0.1A

1

V

DC current gain(note)

hFE

VCE=2V, IC=1mA

200

VCE=2V, IC=0.5A

230

800

VCE=2V, IC=0.1A

150

Current gain bandwidth product

fT

VCE=6V,IC=50mA

150

MHz

Output Capacitance

Cob

VCB=20V, f=1MHz ,IE=0A

50

pF

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

230 -380

340-600

560-800

2SD965 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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