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SQJ486EP 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SQJ486EP 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 13 page ![]() SQJ202EP www.vishay.com Vishay Siliconix S15-2474-Rev. A, 19-Oct-15 3 Document Number: 62926 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Turn-On Delay Time c td(on) VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 8.8 13.5 ns VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 10.7 16.5 Rise Time c tr VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 3.2 5 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 4.5 7 Turn-Off Delay Time c td(off) VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 20 30 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 28 42 Fall Time c tf VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 2.6 4 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 5 8 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM N-Ch 1 - - 80 A N-Ch 2 - - 180 Forward Voltage VSD IF = 10 A, VGS = 0 V N-Ch 1 - 0.8 1.2 V IF = 20 A, VGS = 0 V N-Ch 2 - 0.8 1.2 |
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