ISO150AP datasheet(7/21 Pages) TI1

7 / 21 page

1016

1015

1014

1013

1012

1011

1010

100

120

140

160

180

Temperature (5C)

ISOLATION BARRIER

ISO150

www.ti.com .......................................................................................................................................... SBOS032D – SEPTEMBER 2000 – REVISED AUGUST 2008

TYPICAL CHARACTERISTICS (continued)

At TA = 25°C and VS = 5 V, unless otherwise noted.

TYPICAL INSULATION RESISTANCE

vs TEMPERATURE

Figure 13.

produced by localized ionization within the barrier;

this is the most sensitive and reliable indicator of

barrier integrity and longevity, and does not damage

Data is transmitted by coupling complementary logic

the barrier. A device fails the test if five or more

pulses to the receiver through two 0.4 pF capacitors.

current pulses of 5pC or greater are detected.

These capacitors are built into the ISO150 package

Conventional isolation barrier testing applies test

with

Faraday

shielding

guard

against

false

voltage far in excess of the rated voltage to

triggering by external electrostatic fields.

catastrophically break down a marginal device. A

The integrity of the isolation barrier of the ISO150 is

device that passes the test may be weakened, and

verified by partial discharge testing: 2400 Vrms, 60

lead to premature failure.

Hz, is applied across the barrier for one second while

measuring any tiny discharge currents that might flow

through

the

barrier.

These

current

pulses

are

Submit Documentation Feedback

Product Folder Link(s): ISO150

ISO150AP 데이터시트(PDF) 7 Page - Texas Instruments

ISO150AP 데이터시트(HTML) 7 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

데이터시트 다운로드

링크 URL