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LM4666SDA 데이터시트(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM4666SDA
상세설명  Filterless High Efficiency Stereo 1.2W Switching Audio Amplifier
PDF  15 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4666SDA 데이터시트(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics V
DD =3V
(Notes 1, 2)
The following specifications apply for V
DD = 3V and RL =15µH+8
Ω + 15µH unless otherwise specified. Limits apply for T
A =
25˚C.
Symbol
Parameter
Conditions
LM4666
Units
(Limits)
Typical
Limit
(Note 6)
(Notes 7, 8)
I
DD
Quiescent Power Supply Current
V
IN = 0V, No Load
V
IN = 0V, RL =15µH+8
Ω + 15µH
6.5
7.0
10
mA (max)
I
SD
Shutdown Current
V
SD = GND (Note 9)
0.02
2.0
µA (max)
V
SDIH
Shutdown Voltage Input High
1.0
1.4
V (min)
V
SDIL
Shutdown Voltage Input Low
0.8
0.4
V (max)
V
GSIH
Gain Select Input High
1.0
1.4
V (min)
V
GSIL
Gain Select Input Low
0.8
0.4
V (max)
A
V
Closed Loop Gain
V
Gain Select =VDD
6
5.25
6.75
dB (min)
dB (max)
A
V
Closed Loop Gain
V
Gain Select = GND
12
11.25
12.75
dB (min)
dB (max)
V
OS
Output Offset Voltage
10
35
mV (max)
T
WU
Wake-up Time
6
ms
P
o
Output Power
THD = 1% (max); f = 1kHz,
22kHz BW
450
400
mW (min)
THD+N
Total Harmonic Distortion+Noise
P
O = 100mWRMS/Channel,
f
IN = 1kHz, 22kHz BW,
Both channels in phase
0.65
%
X
TALK
Channel Separation
P
O = 100mWRMS, f = 1kHz
57
dB
R
IN
Differential Input Resistance
V
Gain Select =VDD
90
k
Ω
V
Gain Select = GND
60
k
Ω
PSRR
Power Supply Rejection Ratio
V
ripple = 100mVRMS sine wave,
f
RIPPLE = 217Hz,
Inputs terminated to AC GND
60
dB
V
Ripple = 100mVRMS sine wave,
f
RIPPLE = 217Hz,
P
OUT = 10mW,1kHz
65
dB
CMRR
Common Mode Rejection Ratio
V
Ripple = 100mVRMS,
f
Ripple = 217Hz, Input referred
48
dB
SNR
Signal to Noise Ratio
P
O = 400mWRMS, A-Weighted Filter
83
dB
e
OUT
Output Noise
A-Weighted filter, V
in = 0V
125
µV
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum
allowable power dissipation is PDMAX =(TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4666, TJMAX = 150˚C.
The typical
θJA is 63˚C/W and the typical θJC is 12˚C/W for the SDA package.
Note 4: Human body model, 100pF discharged through a 1.5k
Ω resistor.
Note 5: Machine Model, 220pF – 240pF discharged through all pins.
Note 6: Typical specifications are specified at 25˚C and represent the parametric norm.
Note 7: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: Shutdown current is measured in a normal room environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA. The Shutdown pin should
be driven as close as possible to GND for minimal shutdown current and to VDD for the best THD performance in PLAY mode. See the Application Information
section under SHUTDOWN FUNCTION for more information.
Note 10: The performance graphs were taken using the Audio Precision AUX–0025 Switching Amplifier Measurement Filter in series with the LC filter on the demo
board.
www.national.com
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