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AS4C4M16SA 데이터시트(PDF) 9 Page - Alliance Semiconductor Corporation

부품명 AS4C4M16SA
상세설명  Synchronous DRAM
PDF  54 Pages
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제조업체  ALSC [Alliance Semiconductor Corporation]
홈페이지  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C4M16SA 데이터시트(HTML) 9 Page - Alliance Semiconductor Corporation

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AS4C4M16SA - Automotive
Confidential
9
Rev. 1.0-63nm Mar. /2014
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
NOP
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
T7
T8
NOP
DQM
DOUT A0
DIN B0
DIN B1
DIN B2
CAS# Latency=3
tCK3, DQ
Must be Hi-Z before
the Write Command
Don’t Care
Figure 7. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3)
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
NOP
NOP
READ A
NOP
NOP
WRITE B
NOP
NOP
T7
T8
NOP
DQM
DIN B0
DIN B1
DIN B2
DIN B3
CAS# Latency=2
tCK2, DQ
Must be Hi-Z before
the Write Command
Don’t Care
Figure 8. Read to Write Interval (Burst Length  4, CAS# Latency = 2)
A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll
command to the same bank. The following figure shows the optimum time that BankPrecharge/
PrechargeAll command is issued in different CAS latency.
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
READ A
NOP
NOP
NOP
Precharge
NOP
NOP
Activate
T7
T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
ADDRESS
Bank,
Col A
Bank (s)
Bank
Row
tRP
Figure 9. Read to Precharge (CAS# Latency = 2, 3)
5 Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the read
operation. Once this command is given, any subsequent command cannot occur within a time delay of
{tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this command and the auto
precharge function is ignored.



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