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AXE135M 데이터시트(PDF) 1 Page - Advanced XTAL Products |
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AXE135M 데이터시트(HTML) 1 Page - Advanced XTAL Products |
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1 / 3 page ![]() AXE135M Rev.2 ww.axtal.com Roemerring 9 Drawing D2 fon: +49 (6261) 939834 D‐74821 Mosbach Page 1(3) fax: +49 (6261) 939836 Germany E‐mail: info@axtal.com GmbH & Co. KG Specification AXE135M Rev.: 2 Date: 2015‐11‐23 Oscillator type: Crystal Oscillator (SPXO) in DIL8 package Parameter min. typ. max. Unit Condition Frequency range 0.1 10 1 60 50 800 MHz MHz MHz HCMOS Sine wave PECL / LVDS Frequency stability Overall stability ±20 to ±100 ppm (Note 2) vs. operating temperature range ±10 to ±50 See tables 1 & 2 ppm Option 3 & 4 Long term (aging) per year ± 3 ppm RF output Signal waveform Sine wave HCMOS/TTL PECL LVDS Option 2 = “S” Option 2 = “H” Option 2 = “P” Option 2 = “L” Load 50 Ω 15 pF or 2 TTL 50 Ω + Bias Option 2 = “S” Option 2 = “H” Option 2 = “P” or “L” Amplitude 0 +10 dBm dBm Option 2 = “S” / 3.3 V Option 2 = “S” / 5.0 V According to relevant Logic Standard Option 2 = “H”, “P”,“L” Symmetry (duty cycle) 40 45 60 55 % % Option 2 = “H” Option 2 = “P”, or “L” Oscillator Enable/Disable function (HCMOS and Sine wave output only) Enable: Pin 1 High or Open Disable: Pin 1 Low VH ≥ 2.0 V VL ≤ 0.8 V Supply voltage VS 3.15 4.75 3.3 5.0 3.45 5.25 V V Option 1 = “3” Option 1 = “5” Current consumption (steady state) (Note 3) 15 ~ 30 25 ~ 100 25 ~ 100 mA mA mA Option 2 = “S” Option 2 = “H” Option 2 = “P” or “L” Enclosure (see drawing) (LxWxH) 12.7x12.7x5.1 max. mm IEC 60679‐3 CO 21 Weight 5 g Packing Tube or Pallet IEC 60286‐3 Screening Option (MIL‐PRF‐55310 Level B or C On request Notes: 1. Terminology and test conditions are according to IEC60679‐1 and MIL‐PRF‐55310, unless otherwise stated 2. Overall tolerance includes initial tolerance, stability over temperature, pushing, pulling and vibration 3. Depending on frequency and supply voltage 4. All combinations of options might not be available. Please consult factory Absolute Maximum Ratings Parameter min. max. Unit Condition Supply Voltage VS ‐0.5 VS + 10% V VS to GND Operable Temperature ‐55 +125 °C Storage Temperature ‐55 +125 °C |
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