MCP9902 datasheet(3/50 Pages) MICROCHIP

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 2015-2016 Microchip Technology Inc.

DS20005382C-page 3

MCP9902/3/4

1.0

ELECTRICAL CHARACTERISTICS

1.1

Electrical Specifications

Absolute Maximum Ratings(†)

Ambient Temperature under Bias...................................................................................................... -40°C to +125°C

Storage Temperature ....................................................................................................................... -65°C to +150°C

Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +4.0V

Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)

Total Power Dissipation( 1)............................................................................................................................. 500mW

Maximum Current out of VSS pin ..................................................................................................................... 20 mA

Maximum Current into VDD pin ........................................................................................................................ 20 mA

Clamp Current, IK (VPIN < 0 or VPIN > VDD)20 mA

ESD Rating, All pins HBM................................................................................................................................. 2000V

Input Current, any pin Except VDD 10 mA

Note 1:

Power dissipation is calculated as follows: PDIS =VDD x{IDD –  IOH}+  {(VDD –VOH)x IOH}+

(VOL x IOL). Rating up to +85°C.

† NOTICE

: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for

extended periods may affect device reliability.

1.2

DC Characteristics

Electrical Characteristics

: Unless otherwise specified, 3.0 ≤ VDD ≤ 3.6V at -40°C ≤ TA ≤ +125°C

Characteristic

Sym.

Min.

Typ.

Max.

Units

Conditions

Power Supply

Supply Voltage

VDD

3.0

3.3

3.6

—

Supply Current

IDD

—

200

450

µA

0.0625 conversion/second, dynamic

averaging disabled

—

225

600

µA

1 conversion/second, dynamic

averaging enabled

—

450

850

µA

4 conversions/second, dynamic

averaging enabled

—1120

1500

µA

> 16 conversions/second, dynamic

averaging enabled

One-Shot Supply

Current

IDD_OS

—

170

230

µA

Device in One-Shot state, no active

SMBus communications, ALERT and

THERM pins not asserted.

Standby Supply Current

IDD_SBY

—

170

230

µA

Device in Standby state, no SMBus

communications, ALERT and THERM

pins not asserted.

Power-on Reset

Voltage

POR_V

—

0.6

0.9

Pin states defined

Power-On Reset

Release Voltage

PORR

—

1.45

—

Rising VDD

Power-Up Timer

tPWRT

—10

—

VDD Rise Rate

VDD_RISE

0.05

—

V/ms

0 to 3V in 60 ms

Supply Voltage

VDD

3.0

3.3

3.6

—

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