P0102BL

3/5

Fig. 1: Maximum average power dissipation

versus average on-state current.

Fig. 2: Average and D.C. on-state current versus

ambient temperature.

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5:

Relative variation of holding current

versus gate-cathode resistance (typical values).

Fig. 6: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24

0.26

0.28

0.30

P(W)

360 °

α

α = 180 °

IT(av)(A)

0

25

50

75

100

125

0.00

0.05

0.10

0.15

0.20

0.25

0.30

IT(av)(A)

α = 180°

D.C

Tamb(°C)

1E-2

1E-1

1E+0

1E+1

1E+2

0.01

0.10

1.00

K=[Zth(j-a)/Rth(j-a)]

tp(s)

-40

-20

0

20

40

60

80

100

120

140

0

1

2

3

4

5

6

IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]

IH & IL

(Rgk = 1k

Ω)

IGT

Tj(°C)

IH[Rgk] / IH[Rgk = 1k ]

Ω

Rgk(k

Ω)

20

18

16

14

12

10

8

6

4

2

0

1E-2

1E-1

1E+0

1E+1

dV/dt[Rgk] / dV/dt[Rgk = 1k ]

Ω

Rgk(k

Ω)

10.0

1.0

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0