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MBR3060 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR3060 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR3060 FEATURES · Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating · Low forward voltage · Guarding for stress protection · 150℃ operating junction temperature · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS · Case: TO-3P package · Mounting position: Any ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V VRMS Maximum RMS Voltage 42 V VDC Maximum DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 15 30 A IFSM Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) 300 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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