| 전자부품 데이터시트 검색엔진 |
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2SB1669-Z 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1669-Z 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB1669-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -3.0A; IB= -300mA -1.0 V VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -3.0A; IB= -300mA -2.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μ A hFE1NOTE DC Current Gain IC= -0.5A; VCE= -5V 100 400 hFE2NOTE DC Current Gain IC= -3A; VCE= -5V 20 fT Transition frequency VCE=-5V ,IC=-500mA 5 MHz Cob Collector output capacitance VCB=-10V ,IE=0,f=1MHz 80 pF NOTE:Pulse test PW≤350us,duty cycle ≤2% |
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