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MJL3281A 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 MJL3281A
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJL3281A 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
MJL3281A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
200
V
V(BR)EBO
Emitter-Base Voltage
IE = 100 uA, IC = 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB=1A
3.0
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
50
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
μ
A
hFE-1
DC Current Gain
IC = 100 mA, VCE = 5 V
60
175
hFE-2
DC Current Gain
IC = 1 A, VCE = 5 V
60
175
hFE-3
DC Current Gain
IC = 3 A, VCE = 5 V
60
175
hFE-4
DC Current Gain
IC = 5 A, VCE = 5 V
60
175
hFE-5
DC Current Gain
IC = 7 A, VCE = 5 V
60
175
hFE-6
DC Current Gain
IC = 8 A, VCE = 5 V
45
hFE-7
DC Current Gain
IC = 15 A, VCE = 5 V
12
IS/b
Second Breakdown
Collector with Base Forward Biased
VCE = 50 Vdc, t =1s
VCE=100Vdc,t=1s
4
1
A
fT
Current–Gain — Bandwidth Product
IC=1Adc,VCE=5Vdc,
ftest=1 MHz
30
MHz
Cob
Output Capacitance
VCB=10Vdc, IE= 0,
ftest = 1 MHz
600
pF
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.



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