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CJS6562 데이터시트(PDF) 1 Page - ZP Semiconductor |
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CJS6562 데이터시트(HTML) 1 Page - ZP Semiconductor |
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1 / 4 page ![]() TSSOP-8 Plastic-Encapsulate Transistors CJS6562 N- and P-Channel 2.5-V(G-S) MOSFET Equivalent circuit Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±12 ±12 V Ta=25 ℃ 4.5 -3.5 Continuous Drain Current (TJ=150 ℃) a Ta=70 ℃ ID 3.6 -2.7 Pulsed Drain Current IDM 30 -30 Continuous Source Current(Diode Conduction) a IS 1.25 -1.25 A Ta=25 ℃ 1.0 Power Dissipation a Ta=70 ℃ PD 0.64 W Maximum Junction-to-Ambient a RthJA 125 ℃/W Operating Junction and Storage Temperature TJ, Tstg -55 ~150 ℃ Notes : a. Surface Mounted on FR4 board, t≤10 S TSSOP-8 1 of 4 sales@zpsemi.com www.zpsemi.com CJS6562 |
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