ACS110-7SN/SB2

6/10

Maximum power dissipation vs RMS on state current.

RMS on-state current vs ambient temperature, case temperature and package

Relative variation of thermal impedance junction to ambient vs pulse duration and package

Relative variation of gate trigger current vs junction temperature

Relative variation of holding and latching current vs junction

Relative variation of dV/dt vs Tj

Surge peak on-state current vs number of cycles

Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t.

On-state characteristics (maximal values)

Thermal resistance junction to ambient vs copper surface under tab

Relative variation of critical (di/dt)c vs junction temperature

OTHER FIGURES

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I

(A)

T(RMS)

α=180°

180°

α

α

P(W)

Fig. 1: Maximum power dissipation versus RMS

on-state current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0

25

50

75

100

125

T

/T

(°C)

tab

lead

α=180°

SOT-223

-

DIL-8

I

(A)

T(RMS)

Fig. 2-1: RMS on-state current versus tab or lead

temperature.

I

(A)

T(RMS)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0

25

50

75

100

125

T

(°C)

amb

α=180°

Printed circuit board FR4

Natural convection

S=5cm²

Fig. 2-2: RMS on-state current versus ambient

temperature.

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t (s)

p

K=[Zth

/Rth

]

(j-a)

(j-a)

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.