TO-252-2L datasheet(1/2 Pages) ZPSEMI

부품명	TO-252-2L

상세설명	Plastic-Encapsulate MOSFETS

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TO-252-2L Plastic-Encapsulate MOSFETS

CJU05N60

N-CHANNEL POWER MOSFET

DESCRIPTION

This advanced high voltage MOSFET is designed to withstand

high energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode with fast

recovery time.

Designed for high voltage, high speed switching applications

such as power suplies, converters, power motor controls and bridge

circuits.

FEATURES

Low RDS(on)

Lower Capacitances

Lower Total Gate Charge

Tighter VSD Specifications

Avalanche Energy Specified

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

ID

4.5

A

Single Pulsed Avalanche Energy (note1)

EAS

2

50

mJ

Power Dissipation (note 2,Ta=25

℃)

1.25

Maximum Power Dissipation (note 3,Tc=25

℃)

PD

120

W

Thermal Resistance from Junction to Ambient

RθJA

100

℃/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-50 ~+150

℃

1. GATE

2. DRAIN

3. SOURCE

TO-252-2L

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CJU05N60

유사한 부품 번호 - TO-252-2L

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Nanjing International G...	TO-252-2L	616Kb / 2P	T O-251-3L/TO-252-2L Plastic-Encapsulate Regulators
ZP Semiconductor	TO-252-2L	568Kb / 2P	Plastic-Encapsulate MOSFETS
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TO-252-2L 데이터시트(PDF) 1 Page - ZP Semiconductor

TO-252-2L 데이터시트(HTML) 1 Page - ZP Semiconductor

유사한 부품 번호 - TO-252-2L

유사한 설명 - TO-252-2L

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