BAS40L datasheet(3/8 Pages) PHILIPS

부품명	BAS40L

상세설명	Schottky barrier diode

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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3 / 8 page

2003 May 20

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAS40L

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60

µm copper strip line.

Soldering

Reflow soldering is the only recommended soldering method.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

continuous forward voltage

see Fig.2

IF = 1 mA

380

IF = 10 mA

500

IF =40mA

continuous reverse current

VR = 30 V; see Fig.3; note 1

µA

VR = 40 V; see Fig.3; note 1

µA

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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