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BAS70L 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAS70L 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 2003 May 20 3 Philips Semiconductors Product specification Schottky barrier diode BAS70L ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 1 mA 410 mV IF = 10 mA 750 mV IF =15mA 1 V IR continuous reverse current VR = 50 V; see Fig.3; note 1 100 µA VR = 70 V; see Fig.3; note 1 10 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.5 2 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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