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BUR52 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUR52 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUR52 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) · High Current Capability · Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS · Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO(SUS) Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 60 A ICM Collector Current-Peak 80 A IB Base Current-Continuous 16 A PC Collector Power Dissipation @TC=100℃ 350 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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