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BD263 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 BD263
상세설명  isc Silicon NPN Darlingtion Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD263 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BD263
DESCRIPTION
·
Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60V
·
DC Current Gain—
: hFE = 750(Min) @ IC= 1.5 A
APPLICATIONS
·
Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
0.1
A
PC
Collector Power Dissipation
TC=25℃
36
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.13
℃
/W


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