MBT35200 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MBT35200MT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mAdc, IB = 0)

V(BR)CEO

–35

–45

—

Vdc

Collector–Base Breakdown Voltage

(IC = –0.1 mAdc, IE = 0)

V(BR)CBO

–55

–65

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –0.1 mAdc, IC = 0)

V(BR)EBO

–5.0

–7.0

—

Vdc

Collector Cutoff Current

(VCB = –35 Vdc, IE = 0)

ICBO

—

–0.03

–0.1

mAdc

Collector–Emitter Cutoff Current

(VCES = –35 Vdc)

ICES

—

–0.03

–0.1

mAdc

Emitter Cutoff Current

(VEB = –4.0 Vdc)

IEBO

—

–0.01

–0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = –1.0 A, VCE = –1.5 V)

(IC = –1.5 A, VCE = –1.5 V)

(IC = –2.0 A, VCE = –3.0 V)

hFE

100

200

—

400

—

Collector–Emitter Saturation Voltage (Note 4.)

(IC = –0.8 A, IB = –0.008 A)

(IC = –1.2 A, IB = –0.012 A)

(IC = –2.0 A, IB = –0.02 A)

VCE(sat)

—

–0.125

–0.175

–0.260

–0.15

–0.20

–0.31

Base–Emitter Saturation Voltage (Note 4.)

(IC = –1.2 A, IB = –0.012 A)

VBE(sat)

—

–0.68

–0.85

Base–Emitter Turn–on Voltage (Note 4.)

(IC = –2.0 A, VCE = –3.0 V)

VBE(on)

—

–0.81

–0.875

Cutoff Frequency

(IC = –100 mA, VCE = –5.0 V, f = 100 MHz)

100

—

MHz

Input Capacitance (VEB = –0.5 V, f = 1.0 MHz)

Cibo

—

600

650

Output Capacitance (VCB = –3.0 V, f = 1.0 MHz)

Cobo

—

100

Turn–on Time (VCC = –10 V, IB1 = –100 mA, IC = –1 A, RL = 3 W)

ton

—

Turn–off Time (VCC = –10 V, IB1 = IB2 = –100 mA, IC = 1 A, RL = 3 W)

toff

—

225

—

4. Pulsed Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%

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