3AD53 datasheet(1/2 Pages) ISC

부품명	3AD53

상세설명	isc Silicon PNP Power Transistors

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제조업체	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistors

3AD53

DESCRIPTION

·

DC Current Gain-

: hFE=20-140@IC= -4A

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.0V(Max)@ IC= -4A

·

APPLICATIONS

·

Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.75

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-24

V

VEBO

Emitter-Base Voltage

-20

V

IC

Collector Current-Continuous

-6

A

PC

Collector Power Dissipation

@TC=55℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

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