Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

1.0

1.5

V

Static Drain-Source On-Resistance

-

13

18

20

28

mΩ

Forward Transfer Admittance

-

16

-

S

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

1149

-

pF

f = 1.0MHz

Output Capacitance

-

157

-

pF

Reverse Transfer Capacitance

-

142

-

pF

Gate Resistance

-

1.51

-

Ω

Total Gate Charge

-

11.6

-

nC

Gate-Source Charge

-

2.7

-

nC

Gate-Drain Charge

-

3.4

-

nC

Turn-On Delay Time

-

11.67

-

ns

Turn-On Rise Time

-

12.49

-

ns

Turn-Off Delay Time

-

35.89

-

ns

Turn-Off Fall Time

-

12.33

-

ns

Notes:

4. Short duration pulse test used to minimize self-heating effect.

5. Guaranteed by design. Not subject to production testing.

DMN2020LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

2 of 2

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