TLE6280GP datasheet(15/25 Pages) INFINEON

15 / 25 page

Datasheet TLE6280GP

2007-07-19

Electrical Characteristics (continued)

Parameter and Conditions

Symbol

Values

Unit

at Tj = –40 … +150 °C, unless otherwise specified

and supply voltage range VS = 8 ... 20V; fPWM = 20kHz;

VCBxx>7.5V

min

typ

max

dI /dt limitation

Non reaction level for dI/dt limitation (100% gate

driver capability) @ VDIDT>0V

VDIDT

Non reaction level for dI/dt limitation (100% gate

driver capability) @ VDIDT<0V

VDIDT

-2

Max. VGxx at full reaction level for dI/dt limitation @

VDIDT = -5V

@ TJ = -40°C

@ TJ = +25°C

@ TJ = +150°C

VGxx(DIDT)

1.9

2.3

3.4

3.0

4.2

Min. falltime at full reaction level for dI/dt limitation

@ VDIDT = +5V

@ TJ = -40°C

@ TJ = +25°C

@ TJ = +150°C

tfall (DIDT)

µs

Impedance of DIDT Pin to GND

10kHz<f<10MHz; VDIDT = 5V

ZDIDT

Ω

Default status of input pins:

To assure a defined status of all input pins in case of disconnection, these pins are internally

secured by pull-up or pull-down current sources with approx. 10µA.

The following table shows the default status of each input pin.

Input pin

Default status

ILx

Low (ext. Mosfet off)

IHx

High (ext. Mosfet off)

DIDT

Low (no dI/dt limitation)

2µs dead time

MFP

Disable (pull-down)

TLE6280GP 데이터시트(PDF) 15 Page - Infineon Technologies AG

TLE6280GP 데이터시트(HTML) 15 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

데이터시트 다운로드

링크 URL