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ESDALC6V1W5 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 ESDALC6V1W5
상세설명  QUAD TRANSIL??ARRAY FOR ESD PROTECTION
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDALC6V1W5 데이터시트(HTML) 2 Page - STMicroelectronics

  ESDALC6V1W5 Datasheet HTML 1Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 2Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 3Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 4Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 5Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 6Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 7Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 8Page - STMicroelectronics ESDALC6V1W5 Datasheet HTML 9Page - STMicroelectronics  
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ESDALC6V1W5
2/9
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
C
Capacitance per line
Rd
Dynamic resistance
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
V
I
V
RM
PP
I
RM
I
V
BR
R
I
V
CL
slope : 1 / Rd
Symbol
Parameter
Test conditions
Value
Unit
VPP
ESD discharge - MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
±25
±15
±8
kV
PPP
Peak pulse power (8/20
µs)
25
W
Tj
Junction temperature
150
°C
Tstg
Storage temperature range
-55to+150
°C
Top
Operating temperature range
-40to+150
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Types
VBR
@IR
IRM
@VRM
Rd
αTC
C
min.
max.
max.
typ.
max.
typ.
max.
note 1
note 2
3V bias
3V bias
VV
mA
µAV
m
Ω
10
-4/°C
pF
pF
ESDALC6V1W5
6.1
7.2
1
1
3
1100
6
7.5
9.5
Note 1 : Square pulse Ipp = 15A, tp=2.5
µs.
Note 2 :
∆ VBR = αT* (Tamb -25°C) * VBR (25°C)



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