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TC7920 데이터시트(PDF) 2 Page - Supertex, Inc

부품명 TC7920
상세설명  Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes
PDF  5 Pages
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제조업체  SUTEX [Supertex, Inc]
홈페이지  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TC7920 데이터시트(HTML) 2 Page - Supertex, Inc

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Doc.# DSFP-TC7920
B080613
TC7920
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Operating and storage temperature
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
12-Lead DFN
Package Marking
Package may or may not include the following marks: Si or
Note:
1.0oz, 4-layer, 3”x4” PCB.
7920
YWLL
Y = Last Digit of Year Sealed
W = Code for Week Sealed
L = Lot Number
= “Green” Packaging
Pin Configuration
12-Lead DFN
(top view)
1
2
3
4
5
6
12
11
10
9
8
7
SN1
DN1
DP1
SP1
DN2
DP2
GN1
GP1
GN2
SN2
GP2
SP2
Thermal
Pad
Typical Thermal Resistance
Package
θ
ja
12-Lead DFN
42OC/W
Ordering Information
Part Number
Package Option Packing
TC7920K6-G
12-Lead DFN
3000/Reel
Product Summary
BV
DSS/BVDGS
R
DS(ON) (max)
N-Channel
P-Channel
N-Channel
P-Channel
200V
-200V
7.0Ω
8.0Ω
Sym
Parameter
Min
Typ
Max
Unit
Condition
V
R
Breakdown voltage
200
-
-
V
I
R = 100µA
VF
Forward voltage
-
1.25
-
V
I
F = 100mA
I
FM
Park forward current
-
3.0
-
A
Pulse width = 1.0μs, D% = 1%, One diode
I
R
Reverse current
-
1.0
-
µA
V
R = 100 V, TA = 25
O
C
-
100
-
V
R = 100 V, TA = 125
O
C
t
rr
Reverse recovery time
-
1.0
-
µs
I
F = IR = 10mA, IRR = 1.0 mA, RL = 100Ω
Drain Output Diodes
Pin Description
Pin #
Function
Description
Pin #
Function
Description
1
GN1
Gate of N-MOSFET 1
7
DP2
Drain of P-MOSFET 2
2
GP1
Gate of P-MOSFET 1
8
DN2
Drain of N-MOSFET 2
3
GN2
Gate of N-MOSFET 2
9
SP1
Source of P-MOSFET 1
4
SN2
Source of N-MOSFET 2
10
DP1
Drain of P-MOSFET 1
5
GP2
Gate of P-MOSFET 2
11
DN1
Drain of N-MOSFET 1
6
SP2
Source of P-MOSFET 2
12
SN1
Source of N-MOSFET 1
Thermal Pad
Die attachment substrate, must be grounded externally



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