| 전자부품 데이터시트 검색엔진 |
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TC7920 데이터시트(PDF) 2 Page - Supertex, Inc |
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TC7920 데이터시트(HTML) 2 Page - Supertex, Inc |
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2 / 5 page ![]() 2 Supertex inc. www.supertex.com Doc.# DSFP-TC7920 B080613 TC7920 Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Operating and storage temperature -55°C to +150°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. 12-Lead DFN Package Marking Package may or may not include the following marks: Si or Note: 1.0oz, 4-layer, 3”x4” PCB. 7920 YWLL Y = Last Digit of Year Sealed W = Code for Week Sealed L = Lot Number = “Green” Packaging Pin Configuration 12-Lead DFN (top view) 1 2 3 4 5 6 12 11 10 9 8 7 SN1 DN1 DP1 SP1 DN2 DP2 GN1 GP1 GN2 SN2 GP2 SP2 Thermal Pad Typical Thermal Resistance Package θ ja 12-Lead DFN 42OC/W Ordering Information Part Number Package Option Packing TC7920K6-G 12-Lead DFN 3000/Reel Product Summary BV DSS/BVDGS R DS(ON) (max) N-Channel P-Channel N-Channel P-Channel 200V -200V 7.0Ω 8.0Ω Sym Parameter Min Typ Max Unit Condition V R Breakdown voltage 200 - - V I R = 100µA VF Forward voltage - 1.25 - V I F = 100mA I FM Park forward current - 3.0 - A Pulse width = 1.0μs, D% = 1%, One diode I R Reverse current - 1.0 - µA V R = 100 V, TA = 25 O C - 100 - V R = 100 V, TA = 125 O C t rr Reverse recovery time - 1.0 - µs I F = IR = 10mA, IRR = 1.0 mA, RL = 100Ω Drain Output Diodes Pin Description Pin # Function Description Pin # Function Description 1 GN1 Gate of N-MOSFET 1 7 DP2 Drain of P-MOSFET 2 2 GP1 Gate of P-MOSFET 1 8 DN2 Drain of N-MOSFET 2 3 GN2 Gate of N-MOSFET 2 9 SP1 Source of P-MOSFET 1 4 SN2 Source of N-MOSFET 2 10 DP1 Drain of P-MOSFET 1 5 GP2 Gate of P-MOSFET 2 11 DN1 Drain of N-MOSFET 1 6 SP2 Source of P-MOSFET 2 12 SN1 Source of N-MOSFET 1 Thermal Pad Die attachment substrate, must be grounded externally |
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