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STP120NF10 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP120NF10
상세설명  N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP120NF10 데이터시트(HTML) 3 Page - STMicroelectronics

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STB120NF10 STP120NF10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 60 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
25
90
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=80 V ID=120 A VGS=10 V
172
32
64
233
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 60 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
132
68
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
VSD (*)
Forward On Voltage
ISD = 120 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A
di/dt = 100A/µs
VDD = 40 V
Tj = 150°C
(see test circuit, Figure 5)
152
760
10
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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