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BFP720F 데이터시트(PDF) 8 Page - Infineon Technologies AG |
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BFP720F 데이터시트(HTML) 8 Page - Infineon Technologies AG |
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8 / 25 page ![]() BFP720F Features Data Sheet 8 Revision 1.1, 2012-10-25 2 Features Applications FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions • High performance general purpose wideband LNA transistor • Operation voltage: 1.0 V to 4.0 V • Transistor geometry optimized for low current applications • 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA • 15 dB maximum available gain at 10 GHz and only 13 mA • 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz • High linearity OP1dB = 7 dBm and OIP3 = 21 dBm at 5.5 GHz and low current consumption of 13 mA • Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available Product Name Package Pin Configuration Marking BFP720F TSFP-4-1 1 = B 2 = E 3 = C 4 = E R9s |
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