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PSOC4100M 데이터시트(PDF) 27 Page - Cypress Semiconductor

부품명 PSOC4100M
상세설명  Programmable System-on-Chip
PDF  41 Pages
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제조업체  CYPRESS [Cypress Semiconductor]
홈페이지  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

PSOC4100M 데이터시트(HTML) 27 Page - Cypress Semiconductor

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PSoC® 4: PSoC 4100M Family
Datasheet
Document Number: 001-96519 Rev. *E
Page 27 of 41
Memory
Table 24. Fixed SPI Master mode AC Specifications
(Guaranteed by Characterization)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID167
TDMO
MOSI valid after Sclock driving edge
–
–
15
ns
SID168
TDSI
MISO valid before Sclock capturing edge.
Full clock, late MISO Sampling used
20
–
–
ns
SID169
THMO
Previous MOSI data hold time with
respect to capturing edge at Slave
0–
–
ns
Table 25. Fixed SPI Slave mode AC Specifications
(Guaranteed by Characterization)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID170
TDMI
MOSI valid before Sclock capturing edge
40
–
–
ns
SID171
TDSO
MISO valid after Sclock driving edge
–
–
42 + 3 ×
(1/FCPU)
ns
SID171A
TDSO_ext
MISO valid after Sclock driving edge in
Ext. Clock mode
–
–
48
ns
SID172
THSO
Previous MISO data hold time
0
–
–
ns
SID172A
TSSELSCK
SSEL Valid to first SCK Valid edge
100
–
–
ns
Table 26. Flash DC Specifications
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID173
VPE
Erase and program voltage
1.71
–
5.5
V
Table 27. Flash AC Specifications
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID174
TROWWRITE
Row (block) write time (erase and
program)
–
–
20
ms
Row (block) =
128 bytes
SID175
TROWERASE
Row erase time
–
–
13
ms
SID176
TROWPROGRAM Row program time after erase
–
–
7
ms
SID178
TBULKERASE
Bulk erase time (128 KB)
–
–
35
ms
SID179
TSECTORERASE Sector erase time (8 KB)
–
–
15
ms
SID180
TDEVPROG
Total device program time
–
–
15
seconds Guaranteed by
characterization
SID181
FEND
Flash endurance
100 K
–
–
cycles
Guaranteed by
characterization
SID182
FRET
Flash retention. TA  55 °C, 100 K P/E
cycles
20
–
–
years
Guaranteed by
characterization
SID182A
Flash retention. TA  85 °C, 10 K P/E
cycles
10
–
–
years
Guaranteed by
characterization
SID182B FRETQ
Flash retention. TA  105 °C, 10K P/E
cycles,
 three years at TA ≥ 85 °C
10
20
–
years
Guaranteed by
characterization.



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