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BFS481 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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BFS481 데이터시트(HTML) 3 Page - Infineon Technologies AG |
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3 / 6 page ![]() 2013-06-18 3 BFS481 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.23 0.4 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.13 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.4 - Minimum noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz NFmin - - 0.9 1.2 - - dB Power gain, maximum stable1) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 20 - dB Power gain, maximum available2) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 15 - dB Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz |S21e|2 - - 16 11 - - dB 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2) |
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