| 전자부품 데이터시트 검색엔진 |
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BSC100N06LS3G 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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BSC100N06LS3G 데이터시트(HTML) 4 Page - Infineon Technologies AG |
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4 / 9 page ![]() BSC100N06LS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 10-1 100 101 102 103 V DS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 t p [s] 0 10 20 30 40 50 60 0 50 100 150 200 T C [°C] 0 10 20 30 40 50 60 0 50 100 150 200 T C [°C] Rev. 2.3 page 4 2013-05-21 |
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